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mosfet metaloxidesemiconductorfieldeffecttransistor optimos tm optimos tm power-transistor ,60v BSZ042N06NS datasheet rev.2.3 final powermanagement&multimarket
2 optimos tm power-transistor ,60v BSZ042N06NS rev.2.3,2014-11-10 final data sheet tsdson-8fl 1description features ?optimizedforhighperformancesmps,e.g.sync.rec. ?100%avalanchetested ?superiorthermalresistance ?n-channel ?qualifiedaccordingtojedec 1) fortargetapplications ?pb-freeleadplating;rohscompliant ?halogen-freeaccordingtoiec61249-2-21 ?highersolderjointreliabilityduetoenlargedsourceinterconnection table1keyperformanceparameters parameter value unit v ds 60 v r ds(on),max 4.2 m w i d 40 a q oss 32 nc q g (0v..10v) 27 nc type/orderingcode package marking relatedlinks BSZ042N06NS pg-tsdson-8 fl 042n06n - 1) j-std20 and jesd22 (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
3 optimos tm power-transistor ,60v BSZ042N06NS rev.2.3,2014-11-10 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
4 optimos tm power-transistor ,60v BSZ042N06NS rev.2.3,2014-11-10 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current i d - - - - - - 40 40 17 a v gs =10v, t c =25c v gs =10v, t c =100c v gs =10v, t c =25c, r thja =60k/w 1) pulsed drain current 2) i d,pulse - - 160 a t c =25c avalanche energy, single pulse 3) e as - - 130 mj i d =20a, r gs =25 w gate source voltage v gs -20 - 20 v - power dissipation p tot - - - - 69 2.1 w t c =25c t a =25c, r thja =60k/w 1) operating and storage temperature t j , t stg -55 - 150 c iec climatic category; din iec 68-1: 55/150/56 3thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case, bottom r thjc - 1.1 1.8 k/w - device on pcb, 6 cm 2 cooling area 1) r thja - - 60 k/w - 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 2) see figure 3 for more detailed information 3) see figure 13 for more detailed information (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
5 optimos tm power-transistor ,60v BSZ042N06NS rev.2.3,2014-11-10 final data sheet 4electricalcharacteristics table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 60 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2.1 2.8 3.3 v v ds = v gs , i d =36a zero gate voltage drain current i dss - - 0.5 10 1 100 a v ds =60v, v gs =0v, t j =25c v ds =60v, v gs =0v, t j =125c gate-source leakage current i gss - 10 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 3.4 4.9 4.2 6.3 m w v gs =10v, i d =20a v gs =6v, i d =5a gate resistance 1) r g - 1.6 2.4 w - transconductance g fs 27 54 - s | v ds |>2| i d | r ds(on)max , i d =20a table5dynamiccharacteristics 1) values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 2000 2500 pf v gs =0v, v ds =30v, f =1mhz output capacitance c oss - 490 612.5 pf v gs =0v, v ds =30v, f =1mhz reverse transfer capacitance c rss - 22 44 pf v gs =0v, v ds =30v, f =1mhz turn-on delay time t d(on) - 10 - ns v dd =30v, v gs =10v, i d =20a, r g,ext ,ext=1.7 w rise time t r - 7 - ns v dd =30v, v gs =10v, i d =20a, r g,ext ,ext=1.7 w turn-off delay time t d(off) - 19 - ns v dd =30v, v gs =10v, i d =20a, r g,ext ,ext=1.7 w fall time t f - 6 - ns v dd =30v, v gs =10v, i d =20a, r g,ext ,ext=1.7 w 1) defined by design. not subject to production test. (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
6 optimos tm power-transistor ,60v BSZ042N06NS rev.2.3,2014-11-10 final data sheet table6gatechargecharacteristics 1) values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 9 - nc v dd =30v, i d =20a, v gs =0to10v gate charge at threshold q g(th) - 5 - nc v dd =30v, i d =20a, v gs =0to10v gate to drain charge 2) q gd - 5 7 nc v dd =30v, i d =20a, v gs =0to10v switching charge q sw - 8 - nc v dd =30v, i d =20a, v gs =0to10v gate charge total 2) q g - 27 32 nc v dd =30v, i d =20a, v gs =0to10v gate plateau voltage v plateau - 4.4 - v v dd =30v, i d =20a, v gs =0to10v gate charge total, sync. fet q g(sync) - 24 - nc v ds =0.1v, v gs =0to10v output charge 2) q oss - 32 40 nc v dd =30v, v gs =0v table7reversediode values min. typ. max. parameter symbol unit note/testcondition diode continuous forward current i s - - 40 a t c =25c diode pulse current i s,pulse - - 160 a t c =25c diode forward voltage v sd - 0.9 1.2 v v gs =0v, i f =20a, t j =25c reverse recovery time 2) t rr - 33 53 ns v r =30v, i f =20 a ,d i f /d t =100a/s reverse recovery charge 2) q rr - 33 - nc v r =30v, i f =20 a ,d i f /d t =100a/s 1) see 2 gate charge waveforms 2 for parameter definition 2) defined by design. not subject to production test. (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
7 optimos tm power-transistor ,60v BSZ042N06NS rev.2.3,2014-11-10 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 175 0 20 40 60 80 p tot =f( t c ) diagram2:draincurrent t c [c] i d [a] 0 25 50 75 100 125 150 175 0 10 20 30 40 50 i d =f( t c ); v gs 3 10v diagram3:safeoperatingarea v ds [v] i d [a] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 -3 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d = t p / t (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
8 optimos tm power-transistor ,60v BSZ042N06NS rev.2.3,2014-11-10 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0.0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 120 140 160 7 v 10 v 6 v 5.5 v 5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.drain-sourceonresistance i d [a] r ds(on) [m w ] 0 40 80 120 160 0 2 4 6 8 10 12 5 v 5.5 v 6 v 7 v 10 v r ds(on) =f( i d ); t j =25c;parameter: v gs diagram7:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 0 20 40 60 80 100 120 140 160 150 c 25 c i d =f( v gs );| v ds |>2| i d | r ds(on)max ;parameter: t j diagram8:typ.forwardtransconductance i d [a] g fs [s] 0 20 40 60 80 100 0 20 40 60 80 100 120 g fs =f( i d ); t j =25c (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
9 optimos tm power-transistor ,60v BSZ042N06NS rev.2.3,2014-11-10 final data sheet diagram9:drain-sourceon-stateresistance t j [c] r ds(on) [m w ] -60 -20 20 60 100 140 180 0 1 2 3 4 5 6 7 8 max typ r ds(on) =f( t j ); i d =20a; v gs =10v diagram10:typ.gatethresholdvoltage t j [c] v gs(th) [v] -60 -20 20 60 100 140 180 0 1 2 3 4 5 360 a 36 a v gs(th) =f( t j ); v gs = v ds diagram11:typ.capacitances v ds [v] c [pf] 0 20 40 60 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram12:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 0 10 1 10 2 10 3 25 c 150 c i f =f( v sd );parameter: t j (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4
10 optimos tm power-transistor ,60v BSZ042N06NS rev.2.3,2014-11-10 final data sheet diagram13:avalanchecharacteristics t av [s] i av [a] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 25 c 100 c 125 c i as =f( t av ); r gs =25 w ;parameter: t j(start) diagram14:typ.gatecharge q gate [nc] v gs [v] 0 10 20 30 0 2 4 6 8 10 12 12 v 48 v 30 v v gs =f( q gate ); i d =20apulsed;parameter: v dd diagram15:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -60 -20 20 60 100 140 180 50 54 58 62 66 70 v br(dss) =f( t j ); i d =1ma (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4 gate charge waveforms
11 optimos tm power-transistor ,60v BSZ042N06NS rev.2.3,2014-11-10 final data sheet 6packageoutlines figure1outlinepg-tsdson-8fl,dimensionsinmm/inches (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4 gate charge waveforms
12 optimos tm power-transistor ,60v BSZ042N06NS rev.2.3,2014-11-10 final data sheet revisionhistory BSZ042N06NS revision:2014-11-10,rev.2.3 previous revision revision date subjects (major changes since last revision) 2.3 2014-11-10 rev.2.3 welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. (enlarged source interconnection) 8 d 7 d 6 d 5 d s 1 s 2 s 3 g 4 gate charge waveforms

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